Mosys Inc

MoSys, Inc. develops, licenses and markets innovative memory technologies for semiconductors. MoSys' patented one-transistor-SRAM technologies offer a combination of high density, low power consumption, high speed and low cost unmatched by other available memory technologies. The single transistor bit cell used in one-transistor-SRAM memory results in the technology achieving much higher density than traditional six transistor SRAMs while using the same standard logic manufacturing processes. one-transistor-SRAM technologies also offer the familiar, refresh-free interface and high performance for random address access cycles associated with traditional SRAMs. In addition, these technologies can reduce operating power consumption by a factor of four compared with traditional SRAM technology, contributing to making them ideal for embedding large memories in System-on-Chip designs.

Address Details

Address: 2309 BERING DRIVE

City: SAN JOSE

State: CA

Country: USA

Zip Code: 95131